TSMC 180 G, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Benefits
- Leakage divided by 1000 compared to conventional library at 180 nm
- Directly connected to the battery
- Avoid the need of a regulator
- Denser than an HVT library coupled to a regulator.
Specificities
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Variants
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VT
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Operating Voltage
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180 G
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Thick Oxide 3.3 V | Nominal voltage: 3.3V +/-10% Low voltage: 1V8 +/-10% |
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