Key Benefits

  • Ultra high speed
  • Up to 580 MHz in worst case for 512x32 cut
  • Power reduction features
  • Data retention mode at 1.2 V to divide leakage by a factor of 2.5 compared to simple stand by mode
  • Data retention mode at 0.77 V to divide leakage by a factor of 7 compared to simple stand by mode
  • Flexible power routing: connection to the power grid or from the periphery of the instance
  • Optional Byte write (MUX 2 and 4) and bit-wise write capability (MUX 8)
  • Smart periphery design to reach the highest density
  • Up to 50% gain in density versus alternative memory depending on instance configuration
  • Designed with the uHD HVt Pushed rule bit cell from foundry
  • Easy integration
  • MUX options
  • Data range flexibility allows easy addition of bits for redundancy or ECC purposes
  • Address range flexibility allows easy addition of single rows for redundancy purposes
  • The Dolphin quality
  • Complete mismatch validation of the memory architecture taking into account local and global dispersion
  • Optional BIST for industrial fabrication test of instances

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
65 LP
HD SVT SVT Nominal voltage:
1.2 V +/-10%

64 bits to 40 kbits -