Key Benefits

  • Reduce die cost
  • Unique architecture optimizing the periphery area for outstanding area gain
  • Routing allowed upwards from Metal 4, Support Metal 5 top Metal option
  • Extend battery life
  • Ultra low leakage thanks to careful design structures
  • Optional byte write and bit wise write capability
  • Data retention mode
  • Make integration easier
  • Wide flexibility for words and bits per word
  • Two Read/Write Ports which implements Two-port
  • Register File (1R/1W) functionality
  • Enable right on-first-pass design
  • Complete mismatch validation of the memory architecture taking in account local and global dispersion
  • Extended validation for high coverage rate of the compiler
  • Decrease of Time-To-Market
  • Multi foundries support using the same architecture

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
90 LP eFlash
HD HVT HVT Nominal voltage:
1.2 V +/-10%

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