TSMC 180 G, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.

Key Benefits

  • Leakage divided by 1000 compared to conventional library at 180 nm
  • Directly connected to the battery
  • Avoid the need of a regulator
  • Denser than an HVT library coupled to a regulator.


Operating Voltage
180 G
IO 3.3V Nominal voltage: 3.3V
Low voltage: 1.8V