TSMC 180 RF, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.

Key Benefits

  • Easy creation of ultra low leakage islets: reduce leakage up to 1000 times at 180 nm
  • Power-off or even avoid a regulator thanks to direct battery or pad interface


Operating Voltage
180 RF
IO 3.3V Nominal voltage: 3.3V
Low voltage: 1.8V