SESAME BiV 40 uLPeFlash a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Benefits
- No need for a voltage regulator as it is directly connected to the battery
- Cells designed with 3.3 V thick-oxyde transistors to support a wide operating voltage range from 3.3 V +/-10% to 1.1 V +/-10%
- Custom characterization corners down to 1.1 V +/-10% can be provided
- Ideal for always on clock islets (RTC) and always on functional islets (voice recognition)
- Higher density compared to HVT library combined with voltage regulator
- 12-track cells
- SoC Integration secured and simplified from 3.3 V to 1.2 V
- Full set of high-low and low-high level shifters isolated or not
Specificities
Variants
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VT
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Operating Voltage
|
|
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40 uLP eFlash
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2.5 V od 3.3 V | Nominal voltage: 3.3V +/-10% Low voltage: 1.1V +/-10% ; 1.8V +/- 10% |
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