TSMC 180 G, SESAME HD DV optimized for high density and low power, with characterizations taking into account physical phenomena linked to low voltage.

• Power consumption is divided by up to 2
• Standard cells optimized for low-power at the schematic level
• Battery life increases
• Decrease of heat and life stress of the circuit
• Leakage is divided by up to 2
• Safe and Patented low voltage operation
• High speed optimized architecture for critical designs
• High routability
• Only Metal 1 is used in layout
• Clever I/O pins placement