Key Benefits

  • Configuration
  • SVT transistors for memory periphery
  • uHD HVT pushed rule bit-cell from foundry
  • High speed
  • More than 295 MHz in worst case
  • Architecture specifically suited for MCU
  • Smart periphery design for significant gain in density
  • Power reduction features
  • Data retention mode at 1.2 V or 0.9 V to divide leakage by a factor of 7 compared to simple stand by mode
  • Byte write capability
  • Easy integration
  • MUX options
  • Data range flexibility allows easy addition of bits for redundancy or ECC purposes
  • Address range flexibility allows easy addition of single rows for redundancy purposes
  • The Dolphin quality
  • Complete mismatch validation of the memory architecture taking into account local and global dispersion
  • Optional BIST for industrial fabrication test of instances

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
90 LP eFlash
HC HVT SVT Nominal voltage:
1.2 V +/-10%

Low voltage:
1.0 V +/-10%

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