Key Benefits

  • Foundry sponsored memory generator)
  • High speed
  • More than 200 MHz in worst case
  • SVT MOS for periphery
  • Architecture specifically suited for display driver
  • Smart periphery design for significant gain in density
  • Designed with Pushed rule bit cell from foundry
  • 100 um maximum cell height
  • Designed with 3 metal layers only
  • Power reduction features
  • Data retention mode at 1.5 V to divide leakage by a factor of 2 compared to simple stand by mode
  • Optional Byte write (MUX 4) and bit-wise write capability (MUX 8)
  • Easy integration
  • MUX options
  • Data range flexibility allows easy addition of bits for redundancy or ECC purposes
  • Address range flexibility allows easy addition of single rows for redundancy purposes
  • The Dolphin quality
  • Complete mismatch validation of the memory architecture taking into account local and global dispersion
  • Optional BIST for industrial fabrication test of instances

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
110 HV_1.5V_5V
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