Foundry sponsored - Dual Port SRAM compiler - TSMC 90 nm LPeF - Memory otimized for high density and low power - compiler range up to 80 k
Key Benefits
- Reduced the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Routing allowed upwards from Metal 4, Support Metal 5 top Metal option
- Extend the battery life
- Ultra low leakage thanks to careful design strcutures ▪
- Optional byte write and bit wise write capability
- Data retention mode
- Make the integration easier
- Wide flexibility for words and bits per word
- Two completely independent Read/Write Ports which implements full Dual-Port (2RW) functionality
- Enable right on 1st pass design, the Dolphin integration quality
- Complete mismatch validation of the memory architecture taking in account local and global dispersion
- Extended validation for high coverage rate of the compiler
Performances
Variants
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VT Bit cell
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VT Periphery
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Operating Voltage
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Capacity
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Option mode
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90 LP eFlash
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HD HVT | HVT | Nominal voltage: 1.2 V +/-10% |
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