Dual Port SRAM compiler - TSMC 55 LPeF - Memory optimized for high density and low power - compiler range up to 32 k
Key Benefits
- Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Routing allowed upwards from Metal 4, Support Metal 5 top Metal option
- Extend the battery life
- Ultra low leakage thanks to careful design strcutures
- Optional bit wise write capability
- Data retention mode
- Make the integration easier
- Wide flexibility for words and bits per word
- Two completely independent Read/Write Ports which implements full Dual-Port (2RW) functionality
- Enable right on 1st pass design
- Complete mismatch validation of the memory architecture taking in account local and global dispersion
- Extended validation for high coverage rate of the compiler
- Decrease of Time-To-Market
- Multi foundries support using the same architecture
Performances
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
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55 LP eFlash
|
HD SVT | SVT | Nominal voltage: 1.2 V +/-10% |
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