Metal programmable ROM compiler - TSMC 152 nm G - Non volatile memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k

Key Benefits

  • Ultra low dynamic power
  • Decrease of packaging cost
  • Smaller SoC area
  • 45% less consuming than conventional metal or via ROM
  • Decrease of fabrication costs
  • Metal 1 and Via metal 1-2 programmable ROM
  • Compatible with 1P4M SoC
  • 20% denser than conventional metal or via ROM
  • Low leakage
  • No leakage in memory plane
  • Minimal leakage in memory periphery
  • 60% less leaky than conventional metal or via ROM
  • Optimal DfY
  • Vias half as numerous in comparison with a traditional metal or via ROM
  • CASSIOPEIA Architecture using bigger transistors for optimized read margin and low sensitivity to mismatch


VT Bit cell
VT Periphery
Operating Voltage
Option mode
152 G
Dolphin bit cell SVT Nominal voltage:
1.8 V +/-10%

1 kbits to 1024 kbits -