Metal programmable ROM compiler - TSMC 152 nm LP - Non volatile memory optimized for low power and high density - compiler range up to 1024 k

Key Benefits

  • Ultra low dynamic power
  • Decrease of packaging cost
  • Smaller SoC area
  • 45% less consuming than conventional metal or via ROM
  • Decrease of fabrication costs
  • Metal 1 and Via metal 1-2 programmable ROM
  • Compatible with 1P4M SoC
  • 20% denser than conventional metal or via ROM
  • Low leakage
  • No leakage in memory plane
  • Minimal leakage in memory periphery
  • 60% less leaky than conventional metal or via ROM
  • Optimal DfY
  • Vias half as numerous in comparison with a traditional metal or via ROM
  • CASSIOPEIA Architecture using bigger transistors for optimized read margin and low sensitivity to mismatch


VT Bit cell
VT Periphery
Operating Voltage
Option mode
152 LP
Dolphin bit cell SVT Nominal voltage:
1.8 V +/-10%

1 kbits to 1024 kbits -