Foundry Sponsored - Single Port SRAM compiler - TSMC 130 nm BCD - Memory optimized for ultra high density and high speed - compiler up to 64 k
Key Benefits
- Foundry sponsored memory generator
- Smart periphery design to reach the highest density
- Memory designed with SVT MOS for periphery and SVT HD PRBC from TSMC for memory core
- Flexible architecture
- To offer several performance trade-offs for any memory size
- Multiple form factors proposed by the generator for a given capacity
- Variable write mask capability
Performances
|
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
|---|---|---|---|---|---|
|
130 BCD
|
HD SVT | SVT | Nominal voltage: 1.5 V +/- 10% |
8kByte | - |