Foundry Sponsored - Single Port SRAM 2048X32 instance - TSMC 130 nm BCD Plus - Memory optimized for ultra high density and high speed
Key Benefits
- Smart periphery design to reach the highest density
- Memory designed with SVT MOS for periphery and SVT HD PRBC from TSMC for memory core
- Flexible architecture
- To offer several performance trade-offs for any memory size
- Multiple form factors proposed by the generator for a given capacity
- Variable write mask capability
Performances
|
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
|---|---|---|---|---|---|
|
130 BCD Plus
|
SVT | SVT | Nominal voltage: 1.5V Low voltage: |
2kByte | - |