Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Key Benefits
- Reach the highest density
- Thanks to smart periphery design
- using High density Pushed Rules Foundry bitcell
- use only 3 metal levels inside the memory
- Extend the battery life
- Designed with partitioned array to reach ultra low power consumption at 1.2 V
- Support stand by mode
- Make the integration easier
- MUX option enabling several performance tradeoffs and form factor
- Data range flexibility allows easy addition of bits for
- ECC purposes
- Address range flexibility allows easy addition of single rows for redundancy purposes
- Enable right on 1st pass design, the Dolphin integration quality
- Complete mismatch validation of the memory architecture taking in account local and global dispersion
- Extended validation for high coverage rate of the compiler
- Silicon proven per TSMC 9000 quality standard
- Decrease of Time-To-Market
- Multi foundries support using the same architecture
Performances
Variants
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VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
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---|---|---|---|---|---|
55 HV
|
HD SVT | LVT SVT |
Nominal voltage: 1.2 V +/-10% Low voltage: |
512 bits - 320 Kbits | - |