Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k

• Reduced die cost
• Pushed rule bit cell from foundry
• Ultra low power
• Low voltage operation down to 1.2 V
• Multi-plane architecture
• Optional Byte write mode
• A Dual Voltage variant of this product is also available
• Ultra low leakage
• Stand by mode
• Data retention mode
• 260 times less leaky in retention mode compared with the PLUTON eLC-RR option in G process!
• This translates into 500 times less leakage compared to simple stand-by mode
• Easy integration
• Mux factor can be chosen
• Deliverables compatible with Top Metal 4 or Top Metal 5 or +
• Wide flexibility for words and bits per word
• The Dolphin quality
• Silicon Proven architecture
• Design methodology ensuring functionality at low voltage