Key Benefits

  • Reduced die cost
  • Pushed rule bit cell from foundry
  • Ultra low power
  • Low voltage operation down to 1.2 V
  • Multi-plane architecture
  • Optional Byte write mode
  • A Dual Voltage variant of this product is also available
  • Ultra low leakage
  • Stand by mode
  • Data retention mode
  • 260 times less leaky in retention mode compared with the PLUTON eLC-RR option in G process!
  • This translates into 500 times less leakage compared to simple stand-by mode
  • Easy integration
  • Mux factor can be chosen
  • Deliverables compatible with Top Metal 4 or Top Metal 5 or +
  • Wide flexibility for words and bits per word
  • The Dolphin quality
  • Silicon Proven architecture
  • Design methodology ensuring functionality at low voltage

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
180 eLL
- - Nominal voltage:
1.8 V +/-10%

Low voltage:
1.2 V min

512 bits to 512 kbits -