Single Port SRAM compiler - TSMC 180 nm G - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k

• Reduced die cost
• Up to 20% denser than alternative solution
• Pushed rule bit cell from foundry
• Ultra low dynamic power
• Low voltage operation down to 0.99 V
• Multi-plane architecture
• Up to 3 times less dynamic power consuming than foundry sponsored solutions
• Optional Byte write mode
• A Dual Voltage variant of this product is also available
• Ultra low leakage
• Data retention mode: only the memory plane and the circuitry for retention would remain powered. Note that this data-retention mode requires 2 VDD power supply lines and one GND.
• Stand by mode
• Easy integration
• Mux factor can be chosen
• Deliverables compatible with Top Metal 4 or Top Metal 5 or +
• Wide flexibility for words and bits per word
• The Dolphin quality
• Mas produced architecture