Single Port SRAM compiler - TSMC 110 nm HV_1.5V_5V_32V - Memory optimized for high density and low power - compiler range up to 320 k
Key Benefits
- Migration of an existing architecture already available for other processes (90, 85, 55 nm)
- Smart periphery design to reach the highest density
- Memory designed with SVT MOS for periphery and SVT uHD PRBC from TSMC for memory core
- Ultra Low dynamic power
- Partitioned array
- Variable write-mask capability
- Flexible power routing: power ring or ring-less
- Low leakage design
- Stand by mode
- Data retention mode at 1.5 V to divide leakage by 25% compared to simple stand by mode
- Easy integration
- Data range flexibility allows easy addition of bits for redundancy or ECC purposes
- Address range flexibility allows easy addition of single rows for redundancy purposes
- The Dolphin quality
- Complete mismatch validation of the memory architecture taking into account local and global dispersion
- Optional BIST for industrial fabrication test of instances
- Compliance with TSMC IP 9000 qualification process
Performances
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
---|---|---|---|---|---|
110 HV
|
- | SVT | Nominal voltage: 1.5 V +/- 10% |
- | - |