Single Port SRAM compiler - TSMC 110 nm HV_1.5V_5V_32V - Memory optimized for high density and low power - compiler range up to 320 k

• Migration of an existing architecture already available for other processes (90, 85, 55 nm)
• Smart periphery design to reach the highest density
• Memory designed with SVT MOS for periphery and SVT uHD PRBC from TSMC for memory core
• Ultra Low dynamic power
• Partitioned array
• Variable write-mask capability
• Flexible power routing: power ring or ring-less
• Low leakage design
• Stand by mode
• Data retention mode at 1.5 V to divide leakage by 25% compared to simple stand by mode
• Easy integration
• Data range flexibility allows easy addition of bits for redundancy or ECC purposes
• Address range flexibility allows easy addition of single rows for redundancy purposes
• The Dolphin quality
• Complete mismatch validation of the memory architecture taking into account local and global dispersion
• Optional BIST for industrial fabrication test of instances
• Compliance with TSMC IP 9000 qualification process