Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for high density and Low power - compiler range up to 640 k
Key Benefits
- Reach the highest density
- Thanks to smart periphery design
- Using High density Pushed Rules Foundry bitcell
- Extend the battery life
- Designed with partitioned array to reach ultra low power consumption at 1.2 V
- Support a couple of power saving modes: stand by and data retention mode
- Make the integration easier
- MUX option enabling several performance tradeoffs and form factor
- Data range flexibility allows easy addition of bits for
- ECC purposes
- Address range flexibility allows easy addition of single
- rows for redundancy purposes
- Enable right on 1st pass design, the integration quality
- Complete mismatch validation of the memory architecture taking in account local and global dispersion
- Extended validation for high coverage rate of the compiler
- Silicon proven per TSMC 9000 quality standard
- Decrease of Time-To-Market
- Multi foundries support using the same architecture
Performances
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
---|---|---|---|---|---|
55 HV
|
HD SVT | LVT SVT |
Nominal voltage: 1.2 V +/-10% Low voltage: |
640 kbits | - |