Key Benefits

  • Configuration
  • SVT transistors for memory periphery
  • HD HVT Pushed rule bit cell from foundry
  • Smart periphery design
  • To reach the highest density
  • Features for low power
  • Partitioned array to reach ultra low power consumption
  • Stand by mode
  • Data retention mode at nominal voltage (1.1 V) and low voltage (0.9 V)
  • Smooth support of different working modes
  • VENUS-eS option of the generator endowed with embedded switches
  • Flexible architecture
  • Innovative banking approach to propose several performance trade-offs for any memory size
  • Multiple form factors
  • Variable write-mask capability
  • Safety of integration
  • Data range flexibility allows easy addition of bits for ECC purposes
  • Address range flexibility allows easy addition of single rows
  • Robust power grid sizing to prevent IR drop and electromigration effects
  • Metal 4 partially available for routing

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
40 LP
HD SVT SVT Nominal voltage:
1.1 V +/-10%

256 bits - 576 kbits -