Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Key Benefits
- Power reduction features
- Dual voltage capability
- Designed to minimize power consumption
- Decrease of fabrication costs
- Single metal layer via programmable ROM
- High Density architecture and bit cell
- 5% to 30% denser than contenders
- Ultra low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
Performances
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Variants
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VT Bit cell
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VT Periphery
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Operating Voltage
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Capacity
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Option mode
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|---|---|---|---|---|---|
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130 G
|
- | SVT | Nominal voltage: 1.2 V +/-10% Low voltage: |
1 kbit to 1 Mbit | - |