Foundry Sponsored - Metal programmable ROM compiler - TSMC 130 nm BCD - Non volatile memory optimized for low power - compiler range up to 256 k
Key Benefits
- Foundry sponsored memory generator
- For nominal voltage characterization corner
- Power reduction features
- Up to 50% gain in dynamic power consumption compared to standard ROM
- Decrease of fabrication costs
- Via 1 programmable ROM
- 20% gain in density compared to standard ROM
- Ultra low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
- Easy Integration
- Depending on memory capacity up to 5 different MUX options can be selected
- High flexibility for address range and data range
- Compliance with TSMC IP 9000 qualification process
Performances
Variants
|
VT Bit cell
|
VT Periphery
|
Operating Voltage
|
Capacity
|
Option mode
|
---|---|---|---|---|---|
130 BCD
|
- | SVT | Nominal voltage: 1.5 V +/-10% |
1kbits � 1Mbits | - |