Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k

• For nominal voltage characterization corner
• Power reduction features
• Up to 50% gain in dynamic power consumption compared to standard ROM
• Decrease of fabrication costs
• Via 1 programmable ROM
• 20% gain in density compared to standard ROM
• Ultra low leakage
• No leakage in memory plane
• Minimal leakage in memory periphery
• Easy Integration
• Depending on memory capacity up to 5 different MUX options can be selected
• High flexibility for address range and data range
• Compliance with TSMC IP 9000 qualification process