Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k

• Foundry sponsored memory generator
• For nominal voltage characterization corner
• Configuration
• Dolphin's SVT bit-cell and HVT transistors for periphery
• Power reduction features
• Dual Voltage capability 1.2 V +/-10% & 1.0 V +/-10%
• Significant gain in dynamic power consumption compared to alternative ROM
• Decrease of fabrication costs
• Via 1 programmable ROM
• Key patent for high density with only one programming layer
• 5% to 10% gain in density over alternative ROM
• Ultra low leakage
• No leakage in memory plane
• Minimal leakage in memory periphery
• Easy Integration
• Depending on memory capacity up to 5 different MUX options can be selected
• High flexibility for address range and data range