Key Benefits

  • Foundry sponsored memory generator
  • For nominal voltage characterization corner
  • Configuration
  • Dolphin's SVT bit-cell and HVT transistors for periphery
  • Power reduction features
  • Dual Voltage capability 1.2 V +/-10% & 1.0 V +/-10%
  • Significant gain in dynamic power consumption compared to alternative ROM
  • Decrease of fabrication costs
  • Via 1 programmable ROM
  • Key patent for high density with only one programming layer
  • 5% to 10% gain in density over alternative ROM
  • Ultra low leakage
  • No leakage in memory plane
  • Minimal leakage in memory periphery
  • Easy Integration
  • Depending on memory capacity up to 5 different MUX options can be selected
  • High flexibility for address range and data range

Performances

Variants
VT Bit cell
VT Periphery
Operating Voltage
Capacity
Option mode
90 LP eFlash
Dolphin bit cell
SVT
HVT Nominal voltage:
1.2 V +/-10%

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