Metal programmable ROM compiler - TSMC 90 nm LP - Non volatile memory optimized for low power - compiler range up to 1024 k

• Ultra-low-leakage even in a generic process
• No leakage in memory plane
• Minimal leakage in memory periphery while achieving between 230 and 300 MHz in worst case in TSMC 90 nm LP !
• Key patent for high density with only one programming layer
• Optimized for high DfY i.e. no compromise at the cost of design margins such as read margin