Metal programmable ROM compiler - TSMC 130 nm LP - Non volatile memory optimized for ultra high density
Key Benefits
- State-of-the-Art proprietary architecture CASSIOPEIA for tROMet
- Micro-wordline scheme for low power consumption
- Patented bit-cell
- featuring ultra-high-density due to the advanced technology of storing 2bits/ cell
- Self-sequenced circuitry for ensuring robustness against process deviations
Performances
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Variants
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VT Bit cell
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VT Periphery
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Operating Voltage
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Capacity
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Option mode
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130 LP
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- | - | Nominal voltage: 1.5 V +/-10% |
- | - |