Metal programmable ROM compiler - TSMC 130 nm LP - Non volatile memory optimized for ultra high density

Key Benefits

  • State-of-the-Art proprietary architecture CASSIOPEIA for tROMet
  • Micro-wordline scheme for low power consumption
  • Patented bit-cell
  • featuring ultra-high-density due to the advanced technology of storing 2bits/ cell
  • Self-sequenced circuitry for ensuring robustness against process deviations


VT Bit cell
VT Periphery
Operating Voltage
Option mode
130 LP
- - Nominal voltage:
1.5 V +/-10%

- -