Metal programmable ROM compiler - TSMC 90 nm LP - Non volatile memory optimized for ultra high density

• KEY FEATURES
• Key patent "two in one" for ultra-high-density for large capacities starting at 1 Mbit
• Ultra-low-leakage even in generic process:
• no leakage in memory plane
• minimal leakage in memory periphery
• Optimized for high DfY i.e. no compromise at the cost of design margins such as read margin
• Protection against piracy thanks to : patented bit cell and customized scrambling capabilities